Silicon-Based Millimeter-Wave Devices
Johann-Friedrich Luy · Peter Russer
Mas 2013 · Springer Series in Electronics and Photonics Ibhuku elingu-32 · Springer Science & Business Media
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343
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Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.
Mayelana nomlobi
Peter Russer received his Dipl.-Ing. and Dr. techn. degrees in Electrical Engineering from the Vienna University of Technology. He is a Professor and Head of the Institute for High Frequency Engineering at Technische Universität München in Germany. He is a Fellow of the IEEE.
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