Robust SRAM Designs and Analysis
aug 2012. · Springer Science & Business Media
E-knjiga
168
Broj stranica
reportOcjene i recenzije nisu potvrđene Saznajte više
O ovoj e-knjizi
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design.
- Provides a complete and concise introduction to SRAM bitcell design and analysis;
- Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis;
- Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices;
- Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Ocijenite ovu e-knjigu
Recite nam šta mislite.
Informacije o čitanju
Pametni telefoni i tableti
Instalirajte aplikaciju Google Play Knjige za Android i iPad/iPhone uređaje. Aplikacija se automatski sinhronizira s vašim računom i omogućava vam čitanje na mreži ili van nje gdje god da se nalazite.
Laptopi i računari
Audio knjige koje su kupljene na Google Playu možete slušati pomoću web preglednika na vašem računaru.
Elektronički čitači i ostali uređaji
Da čitate na e-ink uređajima kao što su Kobo e-čitači, morat ćete preuzeti fajl i prenijeti ga na uređaj. Pratite detaljne upute Centra za pomoć da prenesete fajlove na podržane e-čitače.
