Technology Computer Aided Design: Simulation for VLSI MOSFET
About this ebook
• Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits
• Introduces the advantages of TCAD simulations for device and process technology characterization
• Presents the fundamental physics and mathematics incorporated in the TCAD tools
• Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus)
• Provides characterization of performances of VLSI MOSFETs through TCAD tools
• Offers familiarization to compact modeling for VLSI circuit simulation
R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
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About the author
Chandan Kumar Sarkar, is a professor of Electronics and Telecommunication, at Jadavpur University, Calcutta, India and a senior member of IEEE. He received B.Sc. (Hons.) and M.Sc. degrees in physics from Aligarh Muslim University, a Ph.D. degree in Radio Physics from the University of Calcutta, and the D.Phil degree from Oxford University. In 1980 Prof. Sarkar received the British Royal Commission Fellowship to work in Oxford University, worked as a visiting scientist in Max Planck Laboratory, Stuttgart, Germany as well as in Linko Pink University, Sweden. He has published more than 300 research papers for international journals and conferences.
