The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
វាយតម្លៃសៀវភៅអេឡិចត្រូនិកនេះ
ប្រាប់យើងអំពីការយល់ឃើញរបស់អ្នក។
អានព័ត៌មាន
ទូរសព្ទឆ្លាតវៃ និងថេប្លេត
ដំឡើងកម្មវិធី Google Play Books សម្រាប់ Android និង iPad/iPhone ។ វាធ្វើសមកាលកម្មដោយស្វ័យប្រវត្តិជាមួយគណនីរបស់អ្នក និងអនុញ្ញាតឱ្យអ្នកអានពេលមានអ៊ីនធឺណិត ឬគ្មានអ៊ីនធឺណិតនៅគ្រប់ទីកន្លែង។
កុំព្យូទ័រយួរដៃ និងកុំព្យូទ័រ
អ្នកអាចស្ដាប់សៀវភៅជាសំឡេងដែលបានទិញនៅក្នុង Google Play ដោយប្រើកម្មវិធីរុករកតាមអ៊ីនធឺណិតក្នុងកុំព្យូទ័ររបស់អ្នក។